By Orly Yadid-Pecht, Ralph Etienne-Cummings
This can be the 1st booklet released on CMOS imagers. It covers the whole chain, ranging from the elemental suggestions of photograph transduction, and keeps with pixel and procedure examples of CMOS lively Pixel Sensor (APS) imagers. CMOS Imagers: From Phototransduction to photo Processing includes six contributed chapters. the 1st 3 element the elemental options of picture transduction, modeling, assessment, and optimization of APS. The final 3 proceed with the outline of APS layout matters utilizing a bottom-up approach, ranging from pixels and completing with photograph processing platforms. quite a few focal-plane snapshot processing choices to both enhance imaging or to extract visible details are offered. The e-book closes with a dialogue of a totally non-traditional strategy for picture noise suppression. certain audiences for this paintings are humans attracted to imaging, even if from the educational, the commercial or the medical area. All scholars, engineers and technical employees drawn to realizing extra in regards to the physics, the layout and the possibility of CMOS imagers are invited to learn the publication. every one bankruptcy can be learn independently.
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Extra resources for CMOS Imagers: From Phototransduction to Image Processing (Fundamental Theories of Physics)
K. Kim, “The physics of charge-coupled devices,” in Charge-Coupled Devices and Systems, M. J. Howes and D. V. Morgan, Eds. Wiley: New York, 1979. Fundamentals of Silicon-Based Phototransduction 51  C. Sequin and M. Tompsett, Charge Transfer Devices, Academic Press: New York, 1975.  J. D. E. Beynon and D. R. Lamb, Charge-Coupled Devices and their Applications, New York: McGraw-Hill, 1980.  Albert J. P. Theuwissen, Solid-State Imaging with Charge-Coupled Devices, Boston: Kluwer, 1995.
In contrast with a conventional PNP transistor, a phototransistor has a large collector-base junction area for collection of photons. Phototransistors usually operate with the base terminal floating. Photogenerated holes in the reverse-biased collector-base junction will be swept into the collector and collected as photocurrent Iph. The emitter-base potential is increased by electrons generated in the base region and swept into the base from the collector. The increase of the emitter-base junction potential causes holes from the emitter to be injected into the base; most of these holes diffuse across the base and appear as additional collector current.
C. Eugene, and A. van der Ziel, “Noise in phototransistors,” IEEE Trans. Electron Devices, vol. ED-18, no. 6, pp. 340–346, 1971. F. van de Wiele, “Photodiode quantum efficiency,” in Solid State Imaging, P. G. Jespers, F. van de Wiele, and M. H. White, Eds. Leyden: Noordhoff, 1976, pp. 47–90. M. Lesser and P. Vu, “Processing of back illuminated 4096 × 4096 Fairchild CCDs at the University of Arizona,” Proc. SPIE, vol. 4306, pp. 196–204, 2001. P. Suni, V. Tsai, and P. Vutz, “4K × 2K pixel three-side buttable scientific CCD imager design and fabrication,” Proc.
CMOS Imagers: From Phototransduction to Image Processing (Fundamental Theories of Physics) by Orly Yadid-Pecht, Ralph Etienne-Cummings